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pd-97288 revc iram136-3063b series 30a, 600v integrated power hybrid ic for hi g h volta g e motor a pp lications with internal shunt resistor description international rectifier's iram136-3063b is a 30a, 600v integrated power hybrid ic with internal shunt resistor for appliance motor drives applications such air conditioning systems and compressor drivers as well as for light industrial application. ir's technology offers an extremely compact, high performance ac motor driver in a single isolated package to simplify design. this advanced hic is a combination of ir's low v ce(on) punch-through igbt technolo gy and the industry benchmark 3-phase high voltage, high speed driver in a fully isolated thermally enhanced package. a built- in temperature monitor and over-current and over-temperature protections, along with the short-circuit rated igbts and integrated under-voltage lockout function, deliver high level of protection and failsafe operation. using a new developed single in line package (sip3) with heat spreader for the power die along with full transfer mold structure minimizes pcb space and resolves isolation problems to heatsink. features ? integrated gate drivers ? temperature monitor and protection ? overcurrent shutdown ? low v ce(on) advance planar super rugged technology ? undervoltage lockout for all channels ? matched propagation delay for all channels ? 5v schmitt-triggered input logic ? cross-conduction prevention logic ? lower di/dt gate driver for better noise immunity ? motor power up to 3.3kw / 85~253 vdc ? fully isolated package, isolation 2000v rms min absolute maximum ratings parameter description value units v ces / v rrm igbt/diode blocking voltage 600 v + positive bus input voltage 450 i o @ t c =25c maximum output current 30 i o @ t c =100c rms phase current (note 1) 15 i o pulsed rms phase current (note 2) 50 f pwm pwm carrier frequency 20 khz p d power dissipation per igbt @ t c =25c 73 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diode & ic) maximum operating junction temperature +150 t c operating case temperature range -20 to +100 t stg storage temperature range -40 to +125 t mounting torque range (m4 screw) 0.7 to 1.17 nm note 1: sinusoidal modulation at v + =400v, t j =150c, f pwm =6khz, modulation depth=0.8, pf=0.6, see figure 3. note 2: t p <100ms; t c =25c; f pwm =6khz. limited by i bus-itrip , see table "inverter section electrical characteristics" v a c www.irf.com 1
iram136-3063b internal electrical schematic C iram136-3063b 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 v - (12) vb1 (1) u, vs1 (2) vb2 (4) v, vs2 (5) vb3 (7) w, vs3 (8) vdd (21) vss (22) r 9 r 8 r1 r3 r5 driver ic lo1 16 lo3 14 lo2 15 r2 r4 r6 i sense (20) v (10) + c 6 c 5 fault(19) hin1 (13) hin2 (14) hin3 (15) lin1 (16) lin2 (17) lin3 (18) thermistor r 7 r 13 r 12 r 14 r 11 c 1 c 2 c 3 c 4 c 7 posistor r s r15 2 www.irf.com
iram136-3063b absolute maximum ratings (continued) symbol parameter min max units conditions i bdf bootstrap diode peak forward current --- 4.5 a t p = 10ms, t j = 150c, t c =100c p br peak bootstrap resistor peak power (single pulse) --- 25.0 w t p =100s, t c =100c v s1,2,3 high side floating supply offset voltage v b1,2,3 - 25 v b1,2,3 +0.3 v v b1,2,3 high side floating supply voltage -0.3 600 v v cc low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, i trip -0.3 lower of (v ss +15v) or v cc +0.3v v inverter section electrical characteristics @t j = 25c symbol parameter min typ max units conditions v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =5v, i c =500a v (br)ces / t temperature coeff. of breakdown voltage --- 0.5 --- v/c v in =5v, i c =1.0ma (25c - 150c) --- 1.90 2.7 i c =15a, v cc =15v --- 2.10 2.8 i c =15a, v cc =15v, t j =125c --- 5 150 v in =5v, v + =600v --- 80 --- v in =5v, v + =600v, t j =125c --- 1.6 2.5 i c =15a --- 1.5 2.2 i c =15a, t j =125c -- -- 1.25 i f =1a --- --- 1.10 i f =1a, t j =125c r br bootstrap resistor value --- 22 --- t j =25c r br /r br bootstrap resistor tolerance --- --- 5 % t j =25c i bus_trip current protection threshold (positive going) 44 --- 58 a t on > 175s v ce(on) collector-to-emitter saturation voltage v v i ces zero gate voltage collector current a v bdfm bootstrap diode forward voltage drop v v fm diode forward voltage drop www.irf.com 3
iram136-3063b inverter section switching characteristics @ t j = 25c symbol parameter min typ max units conditions e on turn-on switching loss --- 550 870 e off turn-off switching loss --- 240 300 e tot total switching loss --- 790 1170 e rec diode reverse recovery energy --- 65 125 t rr diode reverse recovery time --- 50 --- ns e on turn-on switching loss --- 830 1180 e off turn-off switching loss --- 400 550 e tot total switching loss --- 1230 1730 e rec diode reverse recovery energy --- 120 205 t rr diode reverse recovery time --- 140 --- ns q g turn-on igbt gate charge --- 72 108 nc i c =20a, v + =400v, v ge =15v rbsoa reverse bias safe operating area t j =150c, i c =60a, v p =600v v + = 480v v cc =+15v to 0v see ct3 scsoa short circuit safe operating area 10 --- --- s t j =150c, v p =600v, v + = 500v, v cc =+15v to 0v see ct2 full square j j i c =15a, v + =400v v cc =15v, l=2mh energy losses include "tail" and diode reverse recovery see ct1 i c =15a, v + =400v v cc =15v, l=2mh, t j =125c energy losses include "tail" and diode reverse recovery see ct1 recommended operating conditions driver function symbol definition min typ max units v b1,2,3 high side floating supply voltage v s +12 v s +15 v s +20 v s1,2,3 high side floating supply offset voltage note 4 --- 400 v cc low side and logic fixed supply voltage 12 15 20 v t/itrip t/i trip input voltage v ss --- v ss +5 v in logic input voltage lin, hin v ss --- v ss +5 v hin high side pwm pulse width 1 --- --- s deadtime external dead time between hin and lin 2 --- --- s note 3: for more details, see ir21363 data sheet the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. all voltages are absolute referenced to com. the v s offset is tested with all supplies biased at 15v differential v v note 4: logic operational for v s from com-5v to com+600v. logic state held for v s from com-5v to com-v bs . (please refer to dt97-3 for more details) 4 www.irf.com
iram136-3063b static electrical characteristics driver function symbol definition min typ max units v ih logic "0" input voltage 3.0 --- --- v v il logic "1" input voltage --- --- 0.8 v v ccuv+, v bsuv+ v cc and v bs supply undervoltage positive going threshold 10.6 11.1 11.6 v v ccuv-, v bsuv- v cc and v bs supply undervoltage negative going threshold 10.4 10.9 11.4 v v ccuvh, v bsuvh v cc and v bs supply undervoltage lock-out hysteresis --- 0.2 --- v v in,clamp input clamp voltage (hin, lin, t/i trip ) i in =10a 4.9 5.2 5.5 v i qbs quiescent v bs supply current v in =0v --- --- 165 a i qcc quiescent v cc supply current v in =0v --- --- 3.35 ma i lk offset supply leakage current --- --- 60 a i in+ input bias current v in =5v --- 200 300 a i in- input bias current v in =0v --- 100 220 a i trip+ i trip bias current v itrip =5v --- 30 100 a i trip- i trip bias current v itrip =0v --- 0 1 a v(i trip )i trip threshold voltage 440 490 540 mv v(i trip ,hys) i trip input hysteresis --- 70 --- mv v bias (v cc , v bs1,2,3 )=15v, unless otherwise specified. the v in and i in parameters are referenced to com/i trip and are applicable to all six channels. (note 3) dynamic electrical characteristics symbol parameter min typ max units conditions t on input to output propagation turn- on delay time (see fig.11) --- 600 --- ns t off input to output propagation turn- off delay time (see fig. 11) --- 700 --- ns t flin input filter time (hin, lin) 100 200 --- ns v in =0 & v in =5v t blt-trip i trip blancking time 100 150 ns v in =0 & v in =5v d t dead time (v bs =v dd =15v) 220 290 360 ns v bs =v cc =15v m t matching propagation delay time (on & off) --- 40 75 ns v cc = v bs = 15v, external dead time> 400ns t itrip i trip to six switch to turn-off propagation delay (see fig. 2) --- --- 3.75 s v cc =v bs = 15v, i c =15a, v + =400v --- 34 --- t c = 25c --- 29 --- t c = 100c post i trip to six switch to turn-off clear time (see fig. 2) driver only timing unless otherwise specified.) t flt-clr ms v cc =v bs = 15v, i c =15a, v + =400v www.irf.com 5
iram136-3063b thermal and mechanical characteristics symbol parameter min typ max units conditions r th(j-c) thermal resistance, per igbt --- 1.5 1.7 r th(j-c) thermal resistance, per diode --- 2.5 --- r th(c-s) thermal resistance, c-s --- 0.1 --- c d creepage distance 3.5 --- --- mm see outline drawings c/w flat, greased surface. heatsink compound thermal conductivity 1w/mk internal current sensing resistor - shunt characteristics symbol parameter min typ max units conditions r shunt resistance 9.4 9.6 9.8 m t c = 25c t coeff temperature coefficient 0 --- 200 ppm/c p shunt power dissipation --- --- 4.5 w -40c < t c < 100c t range temperature range -20 --- 125 c internal ntc - th ermistor characteristics parameter definition min typ max units conditions r 25 resistance 97 100 103 k t c = 25c r 125 resistance 2.25 2.52 2.8 k t c = 125c b b-constant (25-50c) 4165 4250 4335 k r 2 = r 1 e [b(1/t2 - 1/t1)] temperature range -40 --- 125 c typ. dissipation constant --- 1 --- mw/c t c = 25c input-output logic level table i trip u,v,w 001 v + 0100 011x 1xxx ho lo u,v,w ic driver v + hin1,2,3 lin1,2,3 (13,14,15) (16,17,18) (2,5,8) hin1,2,3 lin1,2,3 6 www.irf.com
iram136-3063b figure 1. input/output timing diagram i trip lin1,2,3 hin1,2,3 t flt-clr 50% 50% u,v,w 50% t itrip 50% figure 2. i trip timing waveform note 7: the shaded area indicates that both high-side and low-side switches are off and therefore the half- bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7
iram136-3063b module pin-out description pin name description 1 v b1 high side floating supply voltage 1 2 u, v s1 output 1 - high side floating supply offset voltage 3nanone 4 v b2 high side floating supply voltage 2 5 v,v s2 output 2 - high side floating supply offset voltage 6nanone 7 v b3 high side floating supply voltage 3 8 w,v s3 output 3 - high side floating supply offset voltage 9nanone 10 v + positive bus input voltage 11 na none 12 v- negative bus input voltage 13 h in1 logic input high side gate driver - phase 1 14 h in2 logic input high side gate driver - phase 2 15 h in3 logic input high side gate driver - phase 3 16 l in1 logic input low side gate driver - phase 1 17 l in2 logic input low side gate driver - phase 2 18 l in3 logic input low side gate driver - phase 3 19 fault/t mon temperature monitor and fault function 20 i sense current monitor 21 v cc +15v main supply 22 v ss negative main supply 8 www.irf.com
iram136-3063b typical application connection iram136-3063b 1 2 2 hin3 hin2 lin1 lin2 lin3 hin1 date code lot # iram136-3063b 3-phase ac motor boot-strap capacitors u v w v cc (15 v) i trip v ss controller v + dc bus capacitors 10m 0.1m flt/t mon 12kohm +5v +15v v - v b1 v b2 v b3 +5v i monitor fault & temp monitor v + 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. in order to provide good decoupling between vcc-vss and vb1,2,3-vs1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0. 1f, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an-1044 or figure 9. bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the vcc. (see maximum ratings table on page 3). 4. after approx. 8ms the fault is reset. (see dynamic characteristics table on page 5). 5. pwm generator must be disabled within fault duration to guarantee shutdown of the system, overcurrent condition must be cleared bef ore resuming operation. 6. fault/t mon monitor pin must be pulled-up to +5v. www.irf.com 9
iram136-3063b 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10121416182 pwm sw itching fre que ncy - k hz maximum output phase rms current - a 0 t c = 80o c t c = 90o c t c = 100o c figure 3. maximum sinusoidal phase current vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, modulation depth=0.8, pf=0.6 0 2 4 6 8 10 12 14 16 18 1 10 100 modulation frequency - hz maximum output phase rms current - a f pwm = 6khz f pwm = 9khz f pwm = 12khz figure 4. maximum sinusoidal phase current vs. modulation frequency sinusoidal modulation, v + =400v, t j =100c, modulation depth=0.8, pf=0.6 10 www.irf.com
iram136-3063b 0 50 100 150 200 250 300 350 0 2 4 6 8 10121416182 pwm sw itching fre que ncy - k hz total power loss- w 0 i out = 18a i out = 15a i out = 12a figure 5. total power losses vs. pwm switching frequency sinusoidal modulation, v + =400v, t j =150c, modulation depth=0.8, pf=0.6 0 50 100 150 200 250 300 350 02468101214161820222 output phase current - a rms total power loss - w 4 f pwm = 12khz f pwm = 9khz f pwm = 6khz figure 6. total power losses vs. output phase current sinusoidal modulation, v + =400v, t j =150c, modulation depth=0.8, pf=0.6 www.irf.com 11
iram136-3063b 0 20 40 60 80 100 120 140 160 02468101214161820222 output phase current - a rms max allowable case temperature - oc 4 f pwm = 6khz f pwm = 9khz f pwm = 12khz figure 7. maximum allowable case temperature vs. output rms current per phase sinusoidal modulation, v + =400v, t j =150c, modulation depth=0.8, pf=0.6 98.3 100 110 120 130 140 150 160 65 70 75 80 85 90 95 100 105 internal therm istor tem perature equivalent read out - c igbt junction temperature - c figure 8. estimated maximum mosfet junction temperature vs. thermistor temperature sinusoidal modulation, v+=400v, iphase=15arms, fsw=6khz, fmod=50hz, mi=0.8, pf=0.6 12 www.irf.com
iram136-3063b 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 thermistor temperature - c thermistor pin read-out voltage - v min avg. ma x t therm r therm t therm r therm t therm r therm c c c -40 4 397119 2 5 1 00000 9 0 7481 -35 3 088599 3 0 79222 9 5 6337 -30 2 197225 3 5 63167 10 0 5384 -25 1 581881 4 0 50677 10 5 4594 -20 1 151037 4 5 40904 11 0 3934 -15 8 46579 5 0 33195 11 5 3380 -10 6 28988 5 5 27091 12 0 2916 -5 4 71632 6 0 22224 12 5 2522 0 3 57012 6 5 18322 13 0 2190 5 2 72500 7 0 15184 13 5 1907 10 2 09710 7 5 12635 14 0 1665 15 1 62651 8 0 10566 14 5 1459 20 1 27080 8 5 8873 15 0 1282 +5v ext r v therm r therm figure 9. thermistor readout vs. temperature (12kohm pull-up resistor, 5v) and normal thermistor resistance values vs. temperature table. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 5 10 15 20 pwm frequency - khz recommended bootstrap capacitor - f 15 f 4.7 f 10f 6.8 f figure 10. recommended bootstrap capacitor value vs. switching frequency www.irf.com 13
iram136-3063b figure 11. switching parameter definitions figure 11a. input to output propagation turn-on delay time. figure 11b. input to output propagation turn-off delay time. figure 11c. diode reverse recovery. 14 www.irf.com
iram136-3063b ho lo u,v,w ic driver lin1,2,3 hin1,2,3 v + figure ct1. switching loss circuit ho lo u,v,w ic driver lin1,2,3 hin1,2,3 i o v + i n i o figure ct2. s.c.soa circuit ho lo u,v,w ic driver hin1,2,3 i o lin1,2,3 v + i n i o figure ct3. r.b.soa circuit www.irf.com 15
iram136-3063b package outline iram136-3063b note2 missing pin : 3,6,9,11 iram136-3063b p 4kb00 note3 note4 note5 note1: unit tolerance is +0.5mm, unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: characters font in this drawing differs from font shown on module. note4: lot code marking. characters font in this drawing differs from font shown on module. note5: p character denotes lead free. characters font in this drawing differs from font shown on module. dimensions in mm for mounting instruction see an-1049 16 www.irf.com
iram136-3063b package outline iram136-3063b2 iram136-3023b p 4db00 note2 note3 note4 missing pin : 3,6,9,11 note5 note1: unit tolerance is +0.5mm, unless otherwise specified. note2: mirror surface mark indicates pin1 identification. note3: part number marking. characters font in this drawing differs from font shown on module. note4: lot code marking. characters font in this drawing differs from font shown on module. note5: p character denotes lead free. characters font in this drawing differs from font shown on module. dimensions in mm for mounting instruction see an-1049 data and specifications are subject to change without notice ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 2011-06-14 www.irf.com 17

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